返回主站|会员中心|保存桌面|手机浏览
普通会员

龙人旗下深圳市龙芯世纪科技有限公司

提供全方位的电子产品技术信息解决方案 嵌入式微处理器系统 16/32位系列 个人数字...

 
产品分类
  • 暂无分类
站内搜索
 
友情链接
  • 暂无链接
首页 > 供应产品 > AT26DF081A-SU 8Mbit,串行DataFlash存储器SOIC-8封装
AT26DF081A-SU 8Mbit,串行DataFlash存储器SOIC-8封装
浏览: 509
单价: 面议
最小起订量: 1
供货总量: 10000
发货期限: 自买家付款之日起 1 天内发货
有效期至: 长期有效
最后更新: 2022-03-12 18:28
 
详细信息
  • AT26DF081A-SU 8Mbit,串行DataFlash存储器SOIC-8封装  
  • 发布时间:2009/9/17 17:20:25   修改时间:2009/9/17 17:20:25 浏览次数:1067
  • AT26DF081A-SU 8Mbit,串行DataFlash存储器SOIC-8封装
    Density8M
    I/O Pins8
    Interface TypeSPI
    Page Size (Bytes)256
    Vcc (V)2.7-3.6
    Pb-Free Packages SOIC (150mil)8
    SOIC (208mil)8

    8-Mbit, 70 MHz Serial Firmware DataFlash?, SPI Mode 0 and 3 Compatible, Byte and Page Program, Block Erase (4KB, 32KB, and 64KB) and Chip Erase, Individual Sector Protection with Global Protect/Unprotect Feature, Hardware and Software Locking, Automatic Erase/Program Fail Checking/Reporting, JEDEC Standard ID, 8-Lead SOIC (150-mil and 200-mil).

    The AT26DF081A is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT26DF081A, with its erase granularity as small as 4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional data storage EEPROM devices. The physical sectoring and the erase block sizes of the AT26DF081A have been optimized to meet the needs of today’s code and data storage applications. By optimizing the size of the physical sectors and erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own protected sectors, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density.

    The AT26DF081A also offers a sophisticated method for protecting individual sectors against erroneous or malicious program and erase operations. By providing the ability to individually protect and unprotect sectors, a system can unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array securely protected. This is useful in applications where program code is patched or updated on a subroutine or module basis, or in applications where data storage segments need to be modified without running the risk of errant modifications to the program code segments. In addition to individual sector protection capabilities,the AT26DF081A incorporates Global Protect and Global Unprotect features that allow the entire memory array to be either protected or unprotected all at once. This reduces overhead during the manufacturing process since sectors do not have to be unprotected one-by-one prior to initial programming. Specifically designed for use in 3-volt systems, the AT26DF081A supports read, program, and erase operations with a supply voltage range of 2.7V to 3.6V. No separate voltage is required for programming and erasing.

    AT26DF081A-SU 特性
    • Single 2.7V - 3.6V Supply
    • Serial Peripheral Interface (SPI) Compatible
      – Supports SPI Modes 0 and 3
    • 70 MHz Maximum Clock Frequency
    • Flexible, Uniform Erase Architecture
      – 4-Kbyte Blocks
      – 32-Kbyte Blocks
      – 64-Kbyte Blocks
      – Full Chip Erase
    • Individual Sector Protection with Global Protect/Unprotect Feature
      – One 32-Kbyte Top Boot Sector
      – Two 8-Kbyte Sectors
      – One 16-Kbyte Sector
      – Fifteen 64-Kbyte Sectors
    • Hardware Controlled Locking of Protected Sectors
    • Flexible Programming Options
      – Byte/Page Program (1 to 256 Bytes)
      – Sequential Program Mode Capability
    • Automatic Checking and Reporting of Erase/Program Failures
    • JEDEC Standard Manufacturer and Device ID Read Methodology
    • Low Power Dissipation
      – 5 mA Active Read Current (Typical)
      – 10 μA Deep Power-down Current (Typical)
    • Endurance: 100,000 Program/Erase Cycles
    • Data Retention: 20 Years
    • Complies with Full Industrial Temperature Range
    • Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
      – 8-lead SOIC (150-mil and 200-mil wide)
    AT26DF081A-SU 订购型号
    Ordering CodePackageMax. Freq. (MHz)Operation Range
    AT26DF081A-SSU8S170Industrial (-40°C to +85°C)
    AT26DF081A-SU8S270Industrial (-40°C to +85°C)
    AT26DF081A-SU 技术支持
    1. ATMEL 爱特梅尔Flash 存储器AT26DF081A 数据手册DataSheet 下载. PDF(PDF 文件格式完整版)
    2. 串行Flash 产品选型指南(Excel 文档格式选型 Excel 文档格式)
    3. ATMEL 爱特梅尔公司全线产品目录. pdf
    4. Programmer Support for Serial Flash Devices. pdf (Other, 8 pages, revision C, updated 4/08)
询价单
Copyright ©2025 版权所有:龙人旗下深圳市龙芯世纪科技有限公司  访问量:18623

销售热线

0755-83574969

返回顶部